MJD117T4G
onsemi
onsemi
TRANS PNP DARL 100V 2A DPAK
$0.85
Available to order
Reference Price (USD)
2,500+
$0.25864
5,000+
$0.24180
12,500+
$0.23900
Exquisite packaging
Discount
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The MJD117T4G from onsemi is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the MJD117T4G ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of MJD117T4G and enhance your electronic projects with this top-quality component from onsemi.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
- Current - Collector Cutoff (Max): 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
- Power - Max: 1.75 W
- Frequency - Transition: 25MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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