MJD122RLG
onsemi
onsemi
TRANS NPN DARL 100V 8A DPAK
$0.29
Available to order
Reference Price (USD)
1+
$0.29374
500+
$0.2908026
1000+
$0.2878652
1500+
$0.2849278
2000+
$0.2819904
2500+
$0.279053
Exquisite packaging
Discount
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Experience unmatched performance with the MJD122RLG Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the MJD122RLG delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
- Power - Max: 1.75 W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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