MJD122T4
STMicroelectronics
STMicroelectronics
TRANS NPN DARL 100V 8A DPAK
$0.93
Available to order
Reference Price (USD)
2,500+
$0.32966
5,000+
$0.30944
12,500+
$0.30608
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MJD122T4 Bipolar Junction Transistor (BJT) by STMicroelectronics is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the MJD122T4 provides consistent performance in demanding applications. Choose STMicroelectronics for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
- Power - Max: 20 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
Related Products
Diodes Incorporated
DSS4140V-7
Nexperia USA Inc.
BCW60D,215
Nexperia USA Inc.
PBSS5240T,215
Diodes Incorporated
ZTX948
Micro Commercial Co
MMBT3906T-TP
NTE Electronics, Inc
NTE385
Diodes Incorporated
ZTX415
Infineon Technologies
BCX71JE6327
Infineon Technologies
SMBT3904E6327HTSA1
Microchip Technology