MJD31CT4G
onsemi
onsemi
TRANS NPN 100V 3A DPAK
$0.67
Available to order
Reference Price (USD)
2,500+
$0.21296
5,000+
$0.19922
12,500+
$0.18548
25,000+
$0.17586
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MJD31CT4G from onsemi is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the MJD31CT4G ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of MJD31CT4G and enhance your electronic projects with this top-quality component from onsemi.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
- Power - Max: 1.56 W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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