MJD45H11J
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 80V 8A DPAK
$0.67
Available to order
Reference Price (USD)
1+
$0.67000
500+
$0.6633
1000+
$0.6566
1500+
$0.6499
2000+
$0.6432
2500+
$0.6365
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the MJD45H11J Bipolar Junction Transistor (BJT) from Nexperia USA Inc., a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the MJD45H11J is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Nexperia USA Inc. for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
- Power - Max: 1.75 W
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
Related Products
onsemi
MJE210G
NTE Electronics, Inc
NTE2675
onsemi
MJE15032G
Fairchild Semiconductor
KSC2785YTA
onsemi
BC857BLT1G
Infineon Technologies
BFN19H6327XTSA1
Nexperia USA Inc.
PBSS4032NT,215
Diodes Incorporated
FZT689BTA
Central Semiconductor Corp
TIP29B PBFREE
Nexperia USA Inc.