MJD50T4G
onsemi
onsemi
TRANS NPN 400V 1A DPAK
$0.73
Available to order
Reference Price (USD)
2,500+
$0.24771
5,000+
$0.23253
12,500+
$0.21735
25,000+
$0.20672
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MJD50T4G Bipolar Junction Transistor (BJT) from onsemi is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the MJD50T4G is a reliable component for demanding applications. onsemi's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
- Current - Collector Cutoff (Max): 200µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
- Power - Max: 1.56 W
- Frequency - Transition: 10MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
Related Products
onsemi
BF199RL1
Nexperia USA Inc.
BCW69,215
STMicroelectronics
MD2103DFP
Diodes Incorporated
DSS8110Y-7
Fairchild Semiconductor
BC307BTA
Panjit International Inc.
PBHV8110DA-AU_R1_000A1
onsemi
MJD50RLG
Diodes Incorporated
FZT948TA
Nexperia USA Inc.
PBSS4240TVL
Nexperia USA Inc.