MJE200G
onsemi
onsemi
TRANS NPN 40V 5A TO126
$0.72
Available to order
Reference Price (USD)
1+
$0.54000
10+
$0.46500
100+
$0.34750
500+
$0.27304
1,000+
$0.21099
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MJE200G Bipolar Junction Transistor (BJT) from onsemi is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the MJE200G is a reliable component for demanding applications. onsemi's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
- Power - Max: 15 W
- Frequency - Transition: 65MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
Related Products
Rohm Semiconductor
2SB1730TL
onsemi
NSS40301MZ4T1G
Toshiba Semiconductor and Storage
2SC3326-A,LF
STMicroelectronics
BUTW92
onsemi
2SC3600D
Diodes Incorporated
2DA1774R-7-F
Nexperia USA Inc.
BC807-25QBZ
Infineon Technologies
BC850CE6359HTMA1
Taiwan Semiconductor Corporation
TSC873CW RPG
Central Semiconductor Corp