MJE270G
onsemi
onsemi
TRANS NPN DARL 100V 2A TO126
$0.81
Available to order
Reference Price (USD)
1+
$0.66000
10+
$0.56200
100+
$0.41980
500+
$0.32986
1,000+
$0.25490
Exquisite packaging
Discount
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Upgrade your electronic designs with the MJE270G Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the MJE270G is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust onsemi for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
- Power - Max: 1.5 W
- Frequency - Transition: 6MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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