MJE3055T
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 60V 10A TO220
$1.16
Available to order
Reference Price (USD)
1+
$0.92000
50+
$0.77300
100+
$0.63870
500+
$0.51388
1,000+
$0.41963
2,500+
$0.38428
5,000+
$0.36072
Exquisite packaging
Discount
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Experience unmatched performance with the MJE3055T Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the MJE3055T delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose NTE Electronics, Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Power - Max: 75 W
- Frequency - Transition: 2MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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