MJE371G
onsemi
onsemi
TRANS PNP 40V 4A TO126
$1.09
Available to order
Reference Price (USD)
1+
$0.61000
10+
$0.53800
100+
$0.41530
500+
$0.33112
1,000+
$0.26763
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MJE371G from onsemi is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the MJE371G is a reliable choice for both commercial and industrial use. Trust onsemi to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 1V
- Power - Max: 40 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
Related Products
Microchip Technology
MNS2N2907AUBP
Microchip Technology
JANS2N2907AUA/TR
onsemi
SMMBTA92LT1G
Diodes Incorporated
BCP5216TA
onsemi
2SC4489S-AN
Microchip Technology
2N2102A
Rohm Semiconductor
MMSTA64T146
STMicroelectronics
STB13005-1
Fairchild Semiconductor
BC638
NXP Semiconductors