MJE4343G
onsemi
onsemi
TRANS NPN 160V 16A TO247-3
$4.98
Available to order
Reference Price (USD)
1+
$3.71000
30+
$3.16667
120+
$2.75967
510+
$2.36659
1,020+
$2.01412
Exquisite packaging
Discount
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The MJE4343G Bipolar Junction Transistor (BJT) from onsemi is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the MJE4343G is a reliable component for demanding applications. onsemi's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 16 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 16A
- Current - Collector Cutoff (Max): 750µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 2V
- Power - Max: 125 W
- Frequency - Transition: 1MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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