MJE5851G
onsemi
onsemi
TRANS PNP 350V 8A TO220
$3.95
Available to order
Reference Price (USD)
1+
$3.14000
50+
$2.67340
100+
$2.29090
500+
$1.89800
1,000+
$1.58783
Exquisite packaging
Discount
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The MJE5851G by onsemi is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the MJE5851G ensures efficient and stable operation. Backed by onsemi's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Last Time Buy
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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