MKI50-12F7
IXYS
IXYS
IGBT MODULE 1200V 65A 350W E2
$115.74
Available to order
Reference Price (USD)
6+
$67.33667
Exquisite packaging
Discount
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Engineered for excellence, the MKI50-12F7 IGBT module by IXYS sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The MKI50-12F7 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. IXYS continues to lead the IGBT module revolution with innovations like the MKI50-12F7.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 65 A
- Power - Max: 350 W
- Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A
- Current - Collector Cutoff (Max): 700 µA
- Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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