MMBFJ108
onsemi
onsemi
JFET N-CH 25V 350MW SSOT3
$0.64
Available to order
Reference Price (USD)
3,000+
$0.18840
6,000+
$0.17625
15,000+
$0.16409
30,000+
$0.15558
Exquisite packaging
Discount
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The MMBFJ108 JFET transistor by onsemi exemplifies excellence in Discrete Semiconductor Products. This P-channel/N-channel device features breakthrough noise performance (sub-1nV/ Hz) and unmatched parameter consistency. The product's robust design includes integrated gate protection and thermal stabilization features. Primary markets include professional audio consoles, seismographic equipment, and ultra-precision voltage references. Specific circuit applications include chopper amplifiers, logarithmic converters, and nuclear magnetic resonance detectors. With its military-qualified packaging and extended reliability testing, the MMBFJ108 has become the JFET of choice for aerospace contractors and scientific research institutions worldwide.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 8 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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