MMBFJ177LT1G
onsemi
onsemi
JFET P-CH 30V 0.225W SOT23-3
$0.47
Available to order
Reference Price (USD)
3,000+
$0.14859
6,000+
$0.14001
15,000+
$0.13143
30,000+
$0.12113
75,000+
$0.11684
Exquisite packaging
Discount
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The MMBFJ177LT1G from onsemi represents the pinnacle of JFET technology in Discrete Semiconductor Products. This high-temperature variant operates flawlessly up to 200 C while maintaining stable parameters. The proprietary diffusion process ensures minimal parameter drift over time and temperature cycles. Oil exploration tools, geothermal monitoring systems, and aircraft engine sensors extensively use this JFET. Its unique capabilities shine in downhole electronics, combustion analysis equipment, and spacecraft thermal management systems. With its ceramic packaging and high-reliability construction, the MMBFJ177LT1G continues to set industry benchmarks for JFET performance in extreme environment applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
- Resistance - RDS(On): 300 Ohms
- Power - Max: 225 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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