MMBT2907A-G
Comchip Technology
Comchip Technology
TRANS PNP 60V 0.6A SOT23-3
$0.25
Available to order
Reference Price (USD)
3,000+
$0.04057
6,000+
$0.03528
15,000+
$0.02999
30,000+
$0.02822
75,000+
$0.02646
150,000+
$0.02293
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MMBT2907A-G Bipolar Junction Transistor (BJT) from Comchip Technology is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the MMBT2907A-G is a reliable component for demanding applications. Comchip Technology's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 250 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
Diotec Semiconductor
BC858CW
onsemi
MMBT6427LT1G
Central Semiconductor Corp
CEN-U07 PBFREE
MACOM Technology Solutions
JANTXV2N3767
Fairchild Semiconductor
TN3019A
Infineon Technologies
BC807-25B5000
onsemi
SMMBTH10LT1
Taiwan Semiconductor Corporation
MMBT3906L RFG
onsemi
2SC3597D
Diodes Incorporated