MMBT2907AQ-7-F
Diodes Incorporated
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT23
$0.04
Available to order
Reference Price (USD)
1+
$0.03973
500+
$0.0393327
1000+
$0.0389354
1500+
$0.0385381
2000+
$0.0381408
2500+
$0.0377435
Exquisite packaging
Discount
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The MMBT2907AQ-7-F from Diodes Incorporated is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the MMBT2907AQ-7-F ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of MMBT2907AQ-7-F and enhance your electronic projects with this top-quality component from Diodes Incorporated.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 310 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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