MMBT3906WT1G
onsemi
onsemi
TRANS PNP 40V 0.2A SC70-3
$0.17
Available to order
Reference Price (USD)
3,000+
$0.02685
6,000+
$0.02430
15,000+
$0.02124
30,000+
$0.01921
75,000+
$0.01717
150,000+
$0.01445
Exquisite packaging
Discount
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Enhance your circuit designs with the MMBT3906WT1G Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The MMBT3906WT1G is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 150 mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
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