MMBT5551-AU_R1_000A2
Panjit International Inc.
Panjit International Inc.
TRANS NPN 160V 0.6A SOT23
$0.28
Available to order
Reference Price (USD)
1+
$0.28000
500+
$0.2772
1000+
$0.2744
1500+
$0.2716
2000+
$0.2688
2500+
$0.266
Exquisite packaging
Discount
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Upgrade your electronic designs with the MMBT5551-AU_R1_000A2 Bipolar Junction Transistor (BJT) by Panjit International Inc.. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the MMBT5551-AU_R1_000A2 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Panjit International Inc. for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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