MMBT6427-7-F
Diodes Incorporated
Diodes Incorporated
TRANS NPN DARL 40V 0.5A SOT23-3
$0.25
Available to order
Reference Price (USD)
3,000+
$0.04707
6,000+
$0.04140
15,000+
$0.03573
30,000+
$0.03384
75,000+
$0.03195
150,000+
$0.02880
Exquisite packaging
Discount
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Experience unmatched performance with the MMBT6427-7-F Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the MMBT6427-7-F delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Diodes Incorporated for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 300 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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