MMBTA06Q-7-F
Diodes Incorporated
Diodes Incorporated
TRANS NPN 80V 0.5A SOT23-3
$0.31
Available to order
Reference Price (USD)
3,000+
$0.05492
6,000+
$0.04830
15,000+
$0.04169
30,000+
$0.03948
75,000+
$0.03728
150,000+
$0.03360
Exquisite packaging
Discount
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The MMBTA06Q-7-F from Diodes Incorporated is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the MMBTA06Q-7-F is a reliable choice for both commercial and industrial use. Trust Diodes Incorporated to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 350 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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