MMBTA14LT1HTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN DARL 30V 0.3A SOT23
$0.14
Available to order
Reference Price (USD)
18,000+
$0.08154
Exquisite packaging
Discount
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The MMBTA14LT1HTSA1 from Infineon Technologies is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the MMBTA14LT1HTSA1 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of MMBTA14LT1HTSA1 and enhance your electronic projects with this top-quality component from Infineon Technologies.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 330 mW
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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