MMBTA55-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PNP 60V 0.5A SOT23-3
$0.23
Available to order
Reference Price (USD)
3,000+
$0.04184
6,000+
$0.03680
15,000+
$0.03176
30,000+
$0.03008
75,000+
$0.02840
150,000+
$0.02560
Exquisite packaging
Discount
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The MMBTA55-7-F Bipolar Junction Transistor (BJT) from Diodes Incorporated is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the MMBTA55-7-F is a reliable component for demanding applications. Diodes Incorporated's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 300 mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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