MMBTH10-FS
Fairchild Semiconductor
Fairchild Semiconductor
RF 0.05A, ULTRA HIGH FREQ BAND
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The MMBTH10-FS RF Bipolar Junction Transistor (BJT) by Fairchild Semiconductor is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the MMBTH10-FS is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Fairchild Semiconductor for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Current - Collector (Ic) (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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