MMBTH24-7-F
Diodes Incorporated
Diodes Incorporated
RF TRANS NPN 40V 400MHZ SOT23-3
$0.00
Available to order
Reference Price (USD)
3,000+
$0.05000
6,000+
$0.04400
15,000+
$0.03800
30,000+
$0.03600
75,000+
$0.03400
150,000+
$0.03000
Exquisite packaging
Discount
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Enhance your RF designs with the MMBTH24-7-F, a high-efficiency Bipolar Junction Transistor (BJT) from Diodes Incorporated. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The MMBTH24-7-F features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust Diodes Incorporated for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 40V
- Frequency - Transition: 400MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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