MMDT4401Q-7-F
Diodes Incorporated
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT36
$0.07
Available to order
Reference Price (USD)
3,000+
$0.07662
Exquisite packaging
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Discover the MMDT4401Q-7-F BJT Array by Diodes Incorporated, a versatile solution for modern electronic designs. This transistor array excels in high-speed switching and linear amplification, featuring matched pairs for consistent performance. Commonly used in audio amplifiers, LED drivers, and power management systems, the MMDT4401Q-7-F is a staple in telecommunications and renewable energy applications. With robust construction and ESD protection, it meets stringent industry standards while simplifying PCB layout for compact devices.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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