MMDT5451-7-F
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP 160V/150V SOT363
$0.40
Available to order
Reference Price (USD)
3,000+
$0.08050
6,000+
$0.07315
15,000+
$0.06580
30,000+
$0.06213
75,000+
$0.05600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MMDT5451-7-F BJT Array from Diodes Incorporated brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The MMDT5451-7-F undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 160V, 150V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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