MMDTC124EE-AQ
Diotec Semiconductor

Diotec Semiconductor
DI Trst. 50V, 30mA
$0.25
Available to order
Reference Price (USD)
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$0.25233
500+
$0.2498067
1000+
$0.2472834
1500+
$0.2447601
2000+
$0.2422368
2500+
$0.2397135
Exquisite packaging
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Engineers choose MMDTC124EE-AQ for its exceptional linearity in amplification circuits. Diotec Semiconductor's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 30 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523