MMST5551Q-7-F
Diodes Incorporated
Diodes Incorporated
TRANS NPN 160V 0.2A SOT323
$0.06
Available to order
Reference Price (USD)
1+
$0.06046
500+
$0.0598554
1000+
$0.0592508
1500+
$0.0586462
2000+
$0.0580416
2500+
$0.057437
Exquisite packaging
Discount
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The MMST5551Q-7-F by Diodes Incorporated is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the MMST5551Q-7-F ensures efficient and stable operation. Backed by Diodes Incorporated's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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