MMSTA55-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PNP 60V 0.5A SOT323
$0.09
Available to order
Reference Price (USD)
3,000+
$0.09200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the MMSTA55-7-F Bipolar Junction Transistor (BJT) from Diodes Incorporated, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the MMSTA55-7-F is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Diodes Incorporated for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 200 mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
Related Products
onsemi
2SD1628F-TD-H
NTE Electronics, Inc
NTE155
Microchip Technology
JANTX2N3500
Diodes Incorporated
ZXTN19020DGTA
onsemi
2SA1552S-H
Solid State Inc.
MJ11016
Diodes Incorporated
MMBTA56Q-13-F
NXP USA Inc.
PDTC123JQA147
onsemi
BC858BDW1T1
Fairchild Semiconductor