MQ2N4857UB/TR
Microchip Technology
Microchip Technology
JFET
$87.76
Available to order
Reference Price (USD)
1+
$87.76500
500+
$86.88735
1000+
$86.0097
1500+
$85.13205
2000+
$84.2544
2500+
$83.37675
Exquisite packaging
Discount
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Microchip Technology's MQ2N4857UB/TR sets new standards for JFET performance in the Discrete Semiconductor Products market. This depletion-mode field-effect transistor features specially processed silicon for minimal parameter dispersion and maximum yield. The innovative design reduces gate leakage current to femtoampere levels while maintaining fast switching characteristics. Primary applications include nuclear instrumentation, submarine cable repeaters, and satellite communication systems. The MQ2N4857UB/TR also excels in specialized uses like cryogenic electronics and radiation-hardened circuits. With its gold-metallized contacts and hermetic packaging options, this JFET is the preferred choice for mission-critical applications in extreme environments.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2 V @ 500 pA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Resistance - RDS(On): 40 Ohms
- Power - Max: 360 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
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