MQ2N4860UB
Microchip Technology
Microchip Technology
JFET
$87.62
Available to order
Reference Price (USD)
1+
$87.61500
500+
$86.73885
1000+
$85.8627
1500+
$84.98655
2000+
$84.1104
2500+
$83.23425
Exquisite packaging
Discount
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Microchip Technology's MQ2N4860UB sets new standards for JFET performance in the Discrete Semiconductor Products market. This depletion-mode field-effect transistor features specially processed silicon for minimal parameter dispersion and maximum yield. The innovative design reduces gate leakage current to femtoampere levels while maintaining fast switching characteristics. Primary applications include nuclear instrumentation, submarine cable repeaters, and satellite communication systems. The MQ2N4860UB also excels in specialized uses like cryogenic electronics and radiation-hardened circuits. With its gold-metallized contacts and hermetic packaging options, this JFET is the preferred choice for mission-critical applications in extreme environments.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2 V @ 500 pA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Resistance - RDS(On): 40 Ohms
- Power - Max: 360 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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