MRF6S20010GNR1
NXP USA Inc.
NXP USA Inc.
RF MOSFET LDMOS 28V TO270-2 GULL
$45.48
Available to order
Reference Price (USD)
500+
$27.92720
Exquisite packaging
Discount
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The MRF6S20010GNR1 by NXP USA Inc. is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The MRF6S20010GNR1's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust NXP USA Inc.'s MRF6S20010GNR1 to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.17GHz
- Gain: 15.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 130 mA
- Power - Output: 10W
- Voltage - Rated: 68 V
- Package / Case: TO-270BA
- Supplier Device Package: TO-270-2 GULL
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