MRF6S20010NR1
NXP USA Inc.
NXP USA Inc.
FET RF 68V 2.17GHZ TO270-2
$36.57
Available to order
Reference Price (USD)
500+
$27.92720
Exquisite packaging
Discount
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The MRF6S20010NR1 by NXP USA Inc. is a premium RF MOSFET transistor belonging to the Discrete Semiconductor Products family, specifically the Transistors - FETs, MOSFETs - RF segment. This component excels in high-frequency applications with its low gate charge, high breakdown voltage, and excellent thermal management. Ideal for RF power amplification, the MRF6S20010NR1 is frequently utilized in amateur radio equipment, cellular infrastructure, and aerospace communication systems. Its reliable performance under extreme conditions makes it a favorite among design engineers. Whether you're developing IoT devices or advanced military communication tools, NXP USA Inc.'s MRF6S20010NR1 delivers unmatched efficiency and signal integrity for your RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.17GHz
- Gain: 15.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 130 mA
- Power - Output: 10W
- Voltage - Rated: 68 V
- Package / Case: TO-270AA
- Supplier Device Package: TO-270-2
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