MRF6V12500GSR5
NXP USA Inc.
NXP USA Inc.
PULSED LATERAL N-CHANNEL RF POWE
$775.27
Available to order
Reference Price (USD)
50+
$368.81440
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MRF6V12500GSR5 from NXP USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the MRF6V12500GSR5 is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust NXP USA Inc.'s expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 960MHz ~ 1.215GHz
- Gain: 19.7dB
- Voltage - Test: 50 V
- Current Rating (Amps): 200µA
- Noise Figure: -
- Current - Test: 200 mA
- Power - Output: -
- Voltage - Rated: 110 V
- Package / Case: NI-780GS-2L
- Supplier Device Package: NI-780GS-2L
Related Products
NXP USA Inc.
AFT26P100-4WSR3-NXP
Freescale Semiconductor
MRF21060R3
Freescale Semiconductor
MRF8P18265HSR5
Wolfspeed, Inc.
CGH40120P
onsemi
3LP03SS-TL-E
Ampleon USA Inc.
CLL3H0914LS-700U
onsemi
2SK1470-TD-E
onsemi
50C02SP-AC
Freescale Semiconductor
AFT09S282NR3 REEL
Ampleon USA Inc.