MRF6V12500HR5
NXP USA Inc.
NXP USA Inc.
FET RF 110V 1.03GHZ NI-780H
$831.50
Available to order
Reference Price (USD)
1+
$831.50000
500+
$823.185
1000+
$814.87
1500+
$806.555
2000+
$798.24
2500+
$789.925
Exquisite packaging
Discount
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Designed for superior RF performance, the MRF6V12500HR5 from NXP USA Inc. is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The MRF6V12500HR5 combines NXP USA Inc.'s advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the MRF6V12500HR5 for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 1.03GHz
- Gain: 19.7dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 200 mA
- Power - Output: 500W
- Voltage - Rated: 110 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
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