MRF6VP2600HR5
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 110V 225MHZ NI-1230
$318.45
Available to order
Reference Price (USD)
1+
$318.45000
500+
$315.2655
1000+
$312.081
1500+
$308.8965
2000+
$305.712
2500+
$302.5275
Exquisite packaging
Discount
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Designed for superior RF performance, the MRF6VP2600HR5 from NXP USA Inc. is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The MRF6VP2600HR5 combines NXP USA Inc.'s advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the MRF6VP2600HR5 for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 225MHz
- Gain: 25dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 2.6 A
- Power - Output: 125W
- Voltage - Rated: 110 V
- Package / Case: NI-1230
- Supplier Device Package: NI-1230
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