MRFE6VP5600HR5
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 130V 230MHZ NI1230
$174.64
Available to order
Reference Price (USD)
1+
$174.64000
500+
$172.8936
1000+
$171.1472
1500+
$169.4008
2000+
$167.6544
2500+
$165.908
Exquisite packaging
Discount
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Meet the MRFE6VP5600HR5, a state-of-the-art RF MOSFET transistor from NXP USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The MRFE6VP5600HR5 combines cutting-edge semiconductor technology with NXP USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the MRFE6VP5600HR5 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 230MHz
- Gain: 25dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 600W
- Voltage - Rated: 130 V
- Package / Case: SOT-979A
- Supplier Device Package: NI-1230-4H
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