MRFE6VP6600NR3,528
NXP USA Inc.
NXP USA Inc.
WIDEBAND RF POWER LDMOS TRANSIST
$86.20
Available to order
Reference Price (USD)
1+
$86.20000
500+
$85.338
1000+
$84.476
1500+
$83.614
2000+
$82.752
2500+
$81.89
Exquisite packaging
Discount
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Optimize your electronic systems with the MRFE6VP6600NR3,528 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the MRFE6VP6600NR3,528 delivers superior performance in diverse environments. NXP USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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