MRFG35003N6AT1
NXP USA Inc.
NXP USA Inc.
FET RF 8V 3.55GHZ PLD-1.5
$20.54
Available to order
Reference Price (USD)
1,000+
$8.27473
Exquisite packaging
Discount
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Engineered for excellence, the MRFG35003N6AT1 RF MOSFET from NXP USA Inc. is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The MRFG35003N6AT1's robust construction ensures long-term reliability even in harsh environments. Choose NXP USA Inc.'s MRFG35003N6AT1 for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Obsolete
- Transistor Type: pHEMT FET
- Frequency: 3.55GHz
- Gain: 10dB
- Voltage - Test: 6 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 180 mA
- Power - Output: 450mW
- Voltage - Rated: 8 V
- Package / Case: PLD-1.5
- Supplier Device Package: PLD-1.5
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