MSA1162GT1G
onsemi
onsemi
TRANS PNP 50V 0.1A SC59
$0.17
Available to order
Reference Price (USD)
3,000+
$0.03266
6,000+
$0.02956
15,000+
$0.02584
30,000+
$0.02336
75,000+
$0.02089
150,000+
$0.01758
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MSA1162GT1G Bipolar Junction Transistor (BJT) from onsemi is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the MSA1162GT1G is a reliable component for demanding applications. onsemi's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 200 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
Related Products
Diodes Incorporated
MMBT2222ALP4-7B
Microchip Technology
JAN2N2222AL
Rohm Semiconductor
2SD2153T100W
Nexperia USA Inc.
PBSS4630PA,115
onsemi
PZT651T1G
Nexperia USA Inc.
PBSS8110X,135
NTE Electronics, Inc
NTE183
onsemi
MJE200STU
Sanyo
2SA1575E-TD-E
onsemi