MSCGLQ50DH120CTBL2NG
Microchip Technology
Microchip Technology
PM-IGBT-SBD-BL2
$164.60
Available to order
Reference Price (USD)
1+
$164.60000
500+
$162.954
1000+
$161.308
1500+
$159.662
2000+
$158.016
2500+
$156.37
Exquisite packaging
Discount
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The MSCGLQ50DH120CTBL2NG from Microchip Technology exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the MSCGLQ50DH120CTBL2NG in megawatt-level wind turbine converters. With Microchip Technology's proven track record, the MSCGLQ50DH120CTBL2NG represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Asymmetrical Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 110 A
- Power - Max: 375 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
- Current - Collector Cutoff (Max): 25 µA
- Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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