MSCSM120AM042CD3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-D3
$990.06
Available to order
Reference Price (USD)
1+
$990.06000
500+
$980.1594
1000+
$970.2588
1500+
$960.3582
2000+
$950.4576
2500+
$940.557
Exquisite packaging
Discount
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Elevate your electronics with the MSCSM120AM042CD3AG from Microchip Technology, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the MSCSM120AM042CD3AG provides the reliability and efficiency you need. Microchip Technology's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
- Power - Max: 2.031kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: D3
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