MSCSM120AM042CT6LIAG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP6C LI
$978.24
Available to order
Reference Price (USD)
1+
$978.24000
500+
$968.4576
1000+
$958.6752
1500+
$948.8928
2000+
$939.1104
2500+
$929.328
Exquisite packaging
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Discover the high-performance MSCSM120AM042CT6LIAG from Microchip Technology, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the MSCSM120AM042CT6LIAG delivers unmatched performance. Trust Microchip Technology's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV
- Power - Max: 2.031kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C LI
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