MSCSM170AM15CT3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP3F
$483.95
Available to order
Reference Price (USD)
1+
$483.95000
500+
$479.1105
1000+
$474.271
1500+
$469.4315
2000+
$464.592
2500+
$459.7525
Exquisite packaging
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Discover the high-performance MSCSM170AM15CT3AG from Microchip Technology, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the MSCSM170AM15CT3AG delivers unmatched performance. Trust Microchip Technology's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
- Power - Max: 862W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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