MSCSM170AM23CT1AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP1F
$277.03
Available to order
Reference Price (USD)
1+
$277.03000
500+
$274.2597
1000+
$271.4894
1500+
$268.7191
2000+
$265.9488
2500+
$263.1785
Exquisite packaging
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Choose the MSCSM170AM23CT1AG from Microchip Technology for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the MSCSM170AM23CT1AG stands out for its reliability and efficiency. Microchip Technology's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
- Power - Max: 602W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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