MSCSM70HM19CT3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP3F
$268.53
Available to order
Reference Price (USD)
1+
$268.53000
500+
$265.8447
1000+
$263.1594
1500+
$260.4741
2000+
$257.7888
2500+
$255.1035
Exquisite packaging
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Choose the MSCSM70HM19CT3AG from Microchip Technology for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the MSCSM70HM19CT3AG stands out for its reliability and efficiency. Microchip Technology's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
- Power - Max: 365W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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