MT29F512G08EBHBFJ4-R:B TR
Micron Technology Inc.

Micron Technology Inc.
IC FLASH NAND 512G PAR 132VBGA
$15.93
Available to order
Reference Price (USD)
1+
$15.93000
500+
$15.7707
1000+
$15.6114
1500+
$15.4521
2000+
$15.2928
2500+
$15.1335
Exquisite packaging
Discount
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Optimize your electronic designs with the MT29F512G08EBHBFJ4-R:B TR Memory IC from Micron Technology Inc., a leading component in the Memory category. This IC offers unparalleled data storage and access speeds, making it a must-have for high-performance systems. Its innovative architecture ensures efficiency and reliability in diverse operating conditions.
The MT29F512G08EBHBFJ4-R:B TR embodies the essential features of Memory ICs: high capacity, fast operation, and low power consumption. These ICs are pivotal in devices that require rapid data processing, such as digital cameras and communication modules. The MT29F512G08EBHBFJ4-R:B TR excels in these areas, providing consistent and dependable performance.
This Memory IC is extensively used in fields like robotics, industrial control systems, and consumer gadgets. For example, it is a key component in robotic arms that require precise and quick data handling. It also enhances the functionality of smart appliances by enabling efficient memory operations. The MT29F512G08EBHBFJ4-R:B TR is a top-tier choice for Memory ICs in various industries.
Specifications
- Product Status: Active
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (TLC)
- Memory Size: 512Gb (64G x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.5V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 132-VBGA
- Supplier Device Package: 132-VBGA (12x18)