MT3S111(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 6V 11.5GHZ SMINI
$0.62
Available to order
Reference Price (USD)
3,000+
$0.24780
6,000+
$0.23541
15,000+
$0.22568
30,000+
$0.21948
Exquisite packaging
Discount
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Upgrade your RF circuits with the MT3S111(TE85L,F), a high-efficiency Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The MT3S111(TE85L,F) offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Toshiba Semiconductor and Storage for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 11.5GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
- Gain: 12dB
- Power - Max: 700mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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