MT47H256M8EB-25E:C
Micron Technology Inc.

Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 60FBGA
$0.00
Available to order
Reference Price (USD)
1+
$17.85000
10+
$16.53000
25+
$16.30000
50+
$16.10000
100+
$14.11000
250+
$13.50000
500+
$13.41000
Exquisite packaging
Discount
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The MT47H256M8EB-25E:C by Micron Technology Inc. is a premium Memory IC designed to enhance the performance of your electronic systems. As part of the Memory category, this IC provides efficient data storage and retrieval, making it indispensable for modern technology. Its compact design and high-speed operation make it a preferred choice for various applications.
Memory ICs like the MT47H256M8EB-25E:C are known for their durability and high performance. These ICs feature advanced architectures that support large data capacities and fast access times. The MT47H256M8EB-25E:C is no exception, offering reliable operation and low power consumption, which are critical for battery-powered devices.
The MT47H256M8EB-25E:C is utilized in numerous fields, including consumer electronics, aerospace, and defense. For instance, it is commonly found in laptops and gaming consoles where speed and storage are essential. Additionally, it is used in aerospace systems where reliability and performance cannot be compromised. The MT47H256M8EB-25E:C is a versatile and dependable Memory IC for diverse applications.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 2Gb (256M x 8)
- Memory Interface: Parallel
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-FBGA (9x11.5)